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Cover Art
E-RESOURCE
Author Rimini, E.

Title Ion implantation : basics to device fabrication / by Emanuele Rimini.

Published Boston : Kluwer Academic Publishers, [1995]
ñ995

Copies

Location Call No. Status
 UniM INTERNET resource    AVAILABLE
Physical description 1 online resource (xii, 393 pages) : illustrations.
Series The Kluwer international series in engineering and computer science ; SECS 293. Electronic materials, science and technology
Kluwer international series in engineering and computer science ; SECS 293.
Kluwer international series in engineering and computer science. Electronic materials, science and technology.
Bibliography Includes bibliographical references (pages [359]-378) and index.
Contents 1 Semiconductor Devices -- 1.1 Introduction -- 1.2 Semiconductor Physics -- 1.3 p-n Junction and Diode -- 1.4 Unipolar and Bipolar Transistors -- 1.5 Ion Implantation and Semiconductor Devices -- 1.6 Damage and Yield -- 1.7 Future Trend -- 2 Ion Implanters -- 2.1 Introduction -- 2.2 Ion Sources -- 2.3 High Energy Implanters -- 2.4 Magnetic Analyzer and Beam Transport -- 2.5 Energy Contamination -- 2.6 Scan System and Current Measurement -- 2.7 Wafer Cooling -- 2.8 Wafer Charging -- 2.9 Uniformity Control and Mapping -- 2.10 Contaminants and Yield -- 2.11 Plasma Immersion Ion Implantation -- 3 Range Distribution -- 3.1 Introduction -- 3.2 Elastic Stopping Power -- 3.3 Electronic Energy Loss -- 3.4 Depth Profile of Implanted Ions -- 3.5 Penetration Anomalies -- 3.6 Channeling Implants -- 3.7 Lateral Spreading -- 3.8 Simulation of Range Distribution -- 4 Radiation Damage -- 4.1 Introduction -- 4.2 Collision Cascade -- 4.3 Damage Distribution -- 4.4 Crystalline Defects -- 4.5 Primary Defects -- 4.6 Hot Implants -- 4.7 Ion Beam Induced Enhanced Crystallization -- 4.8 Ion Implantation into Localized Si Areas -- 5 Annealing and Secondary Defects -- 5.1 Introduction -- 5.2 Solid Phase Epitaxial Growth of Amorphous Silicon -- 5.3 Annealing of Low-Dose Heavy - Ion Implant -- 5.4 Regrowth of Amorphous Layer Under a Mask -- 5.5 Annealing of Heavily Disordered Regions -- 5.6 Rapid Thermal Processing -- 5.7 Impurity Diffusion During Annealing -- 5.8 Interaction of Impurities with Ion Implanted Defects -- 5.9 Defect Engineering -- 6 Analytical Techniques -- 6.1 Introduction -- 6.2 Secondary Ion Mass Spectrometry -- 6.3 Spreading Resistance Profilometry: One and Two Dimensional Analyses -- 6.4 Carrier and Mobility Profiles -- 6.5 Rutherford Backscattering and Channeling Effect -- 6.6 Transmission Electron Microscopy -- 7 Silicon Based Devices -- 7.1 Introduction -- 7.2 Threshold Voltage Control in MOSFET -- 7.3 Short Channel Effects -- 7.4 Shallow Junctions -- 7.5 Complementary MOS Devices and Technology -- 7.6 Lifetime Engineering in Power Devices -- 7.7 High Energy Implant Applications -- 7.8 High-Speed Bipolar Transistors -- 8 Ion Implantation in Compound Semi-Conductor and Buried Layer Synthesis -- 8.1 Introduction -- 8.2 Ion Implantation in GaAs -- 8.3 Ion Implantation in InP -- 8.4 Isolation of III-V Semiconductors -- 8.5 Isolation of Superlattice and Quantum Well Structures -- 8.6 Synthesis of Buried Dielectric -- 8.7 Devices in SOI Substrates -- 8.8 Buried Metal Layer Formation -- 8.9 Compound Semiconductor Based Devices -- Selected References -- References.
Summary Ion Implantation: Basics to Device Fabrication is a collection of research dealing with several aspects of ion implantation, including basic information on the physics of devices, ion implanters, channeling implants, yield, damage and its annealing, in addition to a host of other topics. Particular attention has been paid to those techniques that provide two-dimensional profiles of damage and of dopants, a careful treatment of silicon based devices, threshold voltage control, shallow junctions, minority carrier lifetime control by metallic ion implants, and high energy implants is given in this work. This book, based on a course preceding the biannual Ion Implantation Technology Conference, is a valuable reference for physicists, chemists, materials scientists, processing, device production, device design, and ion beam engineers interested in any aspect of ion implantation, as well as a secondary text for a graduate course on the subject.
Notes Description based on print version record.
Subject Ion implantation.
Semiconductor doping.
Semiconductors -- Design and construction.
Ionenimplantation.
Ion implantation.
Semiconductor doping.
Semiconductors -- Design and construction.
Electronic books.
ISBN 9781461522591 (electronic bk.)
1461522595 (electronic bk.)
0792395204
9780792395201
Standard Number 10.1007/978-1-4615-2259-1